triquint semiconductor texas : phone (972)994-8465 fax (972)994 8504 web: www.triquint.com product datasheet february 14, 2008 1 18-27 ghz 1w power amplifier tga113 5b- scc primary applications ? point-to-point radio ? point-to-multipoint communications ? k band sat-com key features ? 0.25 um phemt technology ? 14 db nominal gain at 23ghz ? 29 dbm nominal p1db ? 37dbm otoi typical ? typical 15db input/output rl ? bias 6 - 7v @ 540 ma ? on-chip power detector diode chip dimensions 2.641 mm x 1.480 mm x 0.1016mm tga1135b fixtured amplifier typical small signal da ta wafer 993150303, 6v/540ma -6 -4 -2 0 2 4 6 8 10 12 14 16 18 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 frequency (ghz) s21 (db) tga1135b nominal output power wafer 993150303, idq=540ma 27 27.5 28 28.5 29 29.5 30 30.5 31 31.5 32 16 17 18 19 20 21 22 23 24 25 26 27 28 29 frequency (ghz) p1db (dbm) note: 1 db of compression not reached on some parts at 27, 27.5 ghz vd = 6v vd = 7v the triquint TGA1135B-SCC is a balanced two- stage hpa mmic design using triquint?s proven 0.25 um power phemt process. the tga11135b is designed to support a variety of millimeter wave applications including point-to- point digital radio and lmds/lmcs. the balanced configuration two stage design consists of a pair of 600 um input devices driving a 4 x 600um output stage. power combining is achieved with on-chip lange couplers. the TGA1135B-SCC provides 29 dbm nominal output power at 1db compression across 18 - 27ghz. typical small signal gain is 14 db across the band. input and output return loss is typically -15db. an on-chip power detector and reference diode may be used for power monitoring/control and bias control loops. the TGA1135B-SCC requires minimum off-chip components. each device is 100% dc and rf tested on-wafer to ensure performance compliance. the device is available in chip form. lead-free and rohs compliant. product description
triquint semiconductor texas : phone (972)994-8465 fax (972)994 8504 web: www.triquint.com product datasheet february 14, 2008 2 TGA1135B-SCC table i maximum ratings symbol parameter 4/ value notes v + positive supply voltage 13 v i + positive supply current 720 ma 1/ i - negative supply current 28.2 ma p in input continuous wave power 23 dbm p d power dissipation 9.4 w t ch operating channel temperature 150 0 c 2/ 3 / t m mounting temperature (30 seconds) 320 0 c t stg storage temperature -65 to 150 0 c 1/ total current for all stages. 2/ these ratings apply to each individual fet. 3/ junction operating temperature will directly affe ct the device median time to failure (t m ). for maximum life, it is recommended that junction temperatures be mainta ined at the lowest possible levels. 4/ these ratings represent the maximum operable valu es for the device . table ii dc specifications (100%) (t a = 25 c + 5 c) notes symbol test conditions 2/ limits units min max i dss1 std 60 282 ma g m1 std 132 318 ms 1/ |v p1 | std 0.5 1.5 v 1/ |v p2 | std 0.5 1.5 v 1/ |v p3-6 | std 0.5 1.5 v 1/ |v bvgd1 | std 13 30 v 1/ |v bvgs1 | std 13 30 v 1/ v p , v bvgd , and v bvgs are negative. 2/ the measurement conditions are subject to change at the manufacture?s discretion (with appropriate notification to the buyer).
triquint semiconductor texas : phone (972)994-8465 fax (972)994 8504 web: www.triquint.com product datasheet february 14, 2008 3 TGA1135B-SCC table iv rf specifications (t a = 25 c + 5 c) note test measurement conditions value units 6v @ 540ma min typ max small-signal gain magnitude 18 ? 20 ghz 21 ? 24 ghz 25 ? 27 ghz 11.5 12 11.5 14 14 14 db power output at 1 db gain compression 18 ? 27 ghz 27 29 dbm input return loss magnitude 18 ? 27 ghz 10 15 db output return loss magnitude 18 ? 27 ghz 10 15 db 1 / output third order intercept 34.5 37 dbm 1 / output third order intercept point minimum perfor mance is measured at 18.0, 23.0, 26.0 ghz, fixed vo ltage, vd = 7.0v, vg = vg1 value passed from s-parameter t esting. power in per tone = -2.0 dbm. separation = 0.010 ghz. table v reliability data parameter bias conditions p diss r jc t ch t m v d (v) i d (ma) (w) (c/w) ( c) (hrs) r jc thermal resistance (channel to backside of carrier plate) 6 540 3.24 23.09 144.8 2.1e7 note: assumes eutectic attach using 1.5 mil 80/20 ausn mounted to a 20 mil cumo carrier at 70 c baseplate temperature. worst case condition with no rf applied, 100% of dc power is dissipated.
triquint semiconductor texas : phone (972)994-8465 fax (972)994 8504 web: www.triquint.com product datasheet february 14, 2008 4 wafer 993150303, 6v/540ma -25 -23 -21 -19 -17 -15 -13 -11 -9 -7 -5 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 frequency (ghz) s11 (db) -6 -4 -2 0 2 4 6 8 10 12 14 16 18 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 frequency (ghz) s21 (db) -25 -23 -21 -19 -17 -15 -13 -11 -9 -7 -5 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 frequency (ghz) s22 (db) s22 s11 s21 measured small signal data 6v, 540ma TGA1135B-SCC
triquint semiconductor texas : phone (972)994-8465 fax (972)994 8504 web: www.triquint.com product datasheet february 14, 2008 5 typical output toi measured data p1db measured data for ~ 18k devices vd = 6v, id = 540 ma 0 50 100 150 200 250 300 350 400 450 500 30 31 32 33 34 35 36 37 38 39 40 41 42 samples wafer 1 wafer 2 wafer 3 pin=-2dbm, vd=7v/460ma, freq=26ghz 24 25 26 27 28 29 30 31 32 18 20 22 24 26 28 frequency (ghz) pout @1db compression (dbm) 5th 25th 50th 75th 95th TGA1135B-SCC
triquint semiconductor texas : phone (972)994-8465 fax (972)994 8504 web: www.triquint.com product datasheet february 14, 2008 6 ref3 gnd vg1 vg2 gnd dq pwr det q1b q2b rf in vd q1a q2a 600 ? m 600 ? m 1200 ? m 1200 ? m vg1 vg2 gnd dq vd ref2 ref1 rf out det out reference diode 1 reference diode 2 note: if drain bias is from one side only, maximum id is 440ma note: no dc current allowed into the ?dq? pad dc schematic TGA1135B-SCC
triquint semiconductor texas : phone (972)994-8465 fax (972)994 8504 web: www.triquint.com product datasheet february 14, 2008 7 dimensions in mm: chip dimensions: 2.641 mm x 1.480 mm chip thickness: 0.1016mm chip edge to bond pads dimensions are shown to center of bond pad rf i/o pad: 200x100 mm dc pads: 105x105 mm die area: 3.909 mm 2 1.253: vd (180x100 m) 0.000 0.686 rf in 0.000 vg2: 0.612 dq: 0.875 0.833 pwr det (175x100 ? m) ref 3: 0.220 ref 2: 2.543 0.098 ref 1: 2.360 vd: 1.253 (180x100 m) 0.373 rf out 1.480 2.641 0.612: vg2 0.875: dq 0.095 det out 2.543 TGA1135B-SCC
triquint semiconductor texas : phone (972)994-8465 fax (972)994 8504 web: www.triquint.com product datasheet february 14, 2008 8 tga1135b built-in power detector on-chip diode functions as envelope detector external coupler and dc bias required external coupler (-20db) eg1135b 50 ? c=2pf video out (v det ) 10k ? external dc bias rf out rf out v bias 100pf 100pf tga1135b with external test coupler (amplifier bias connections not shown) v det rf in rf out eg1135b measured detector voltage offset vs output power with 20db coupler: vb=0.8v, f = 20ghz, coupler loss is uncalibrated, 10k ? load 0.01 0.1 1 10 8 10 12 14 16 18 20 22 24 26 28 30 32 pout (dbm) detector voltage (v) TGA1135B-SCC
triquint semiconductor texas : phone (972)994-8465 fax (972)994 8504 web: www.triquint.com product datasheet february 14, 2008 9 chip assembly and bonding diagram gaas mmic devices are susceptible to damage from el ectrostatic discharge. proper precautions should be observed during handling, assembly and test. 100pf vg input tfn output tfn vd vd 100pf vg (optional) 100pf 0.01 ? f notes: 1. 1 ? f capacitor on gate, drain lines not shown but required 2. 0.01 ? f capacitor may be connected to ?dq? port as shown, or may be included on drain line 3. vg connection is recommended on both sides for devices operating at or above p1db 0.01 ? f 0.01 ? f 0.01 ? f 100pf dq dq TGA1135B-SCC
triquint semiconductor texas : phone (972)994-8465 fax (972)994 8504 web: www.triquint.com product datasheet february 14, 2008 10 reflow process assembly notes: ? ausn (80/20) solder with limited exposure to temper atures at or above 300 c ? alloy station or conveyor furnace with reducing atm osphere ? no fluxes should be utilized ? coefficient of thermal expansion matching is critic al for long-term reliability ? storage in dry nitrogen atmosphere component placement and adhesive attachment assembl y notes: ? vacuum pencils and/or vacuum collets preferred meth od of pick up ? avoidance of air bridges during placement ? force impact critical during auto placement ? organic attachment can be used in low-power applica tions ? curing should be done in a convection oven; proper exhaust is a safety concern ? microwave or radiant curing should not be used beca use of differential heating ? coefficient of thermal expansion matching is critic al interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconn ect technique ? force, time, and ultrasonics are critical parameter s ? aluminum wire should not be used ? discrete fet devices with small pad sizes should be bonded with 0.0007-inch wire ? maximum stage temperature: 200 c assembly process notes gaas mmic devices are susceptible to damage from el ectrostatic discharge. proper precautions should be observed during handling, assembly and test. TGA1135B-SCC
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